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Advance Technical Information
TrenchT2 TM GigaMOS TM
Power MOSFET
IXTK600N04T2
IXTX600N04T2
V DSS =
I D25 =
R DS(on) ≤
40V
600A
1.5m ?
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXTK)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M ?
40
40
V
V
G
D
S
Tab
V GSM
I D25
I L(RMS)
I DM
Transient
T C = 25 ° C (Chip Capability)
External Lead Current Limit
T C = 25 ° C, Pulse Width Limited by T JM
± 20
600
160
1600
V
A
A
A
PLUS247 (IXTX)
I A
E AS
P D
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
200
3
1250
A
J
W
G
D
S
Tab
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
G = Gate
S = Source
D = Drain
Tab = Drain
T L
T SOLD
M d
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
300
260
1.13/10
° C
° C
Nm/lb.in.
Features
International Standard Packages
F C
Weight
Mounting Force
TO-264
PLUS247
(PLUS247)
20..120 /4.5..27
10
6
N/lb.
g
g
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R DS(on)
Advantages
Easy to Mount
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Space Savings
High Power Density
BV DSS
V GS = 0V, I D = 250μA
40
V
Applications
V GS(th)
I GSS
V DS = V GS , I D = 250μA
V GS = ± 20V, V DS = 0V
1.5
3.5
± 200
V
nA
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
I DSS
V DS = V DSS , V GS = 0V
T J = 150 ° C
10 μ A
1 mA
Applications
R DS(on)
V GS = 10V, I D = 100A, Notes 1 & 2
1.5 m ?
? 2009 IXYS CORPORATION, All Rights Reserved
DS100209(11/09)
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功能描述:MOSFET 62 Amps 250V 0.035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXTK82N25P
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